A research team has made a significant breakthrough in thin film deposition technology.
A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a significant breakthrough in thin film deposition technology. By employing an innovative atomic layer deposition process, Professor Seo successfully achieved regular arrangement of tellurium atoms at low temperatures as low as 50 degrees Celsius.
In this groundbreaking research, the UNIST team applied ALD to monoelemental van der Waals tellurium -- a material under extensive investigation for its potential applications in electronic devices and thermoelectric materials. Remarkably, they successfully fabricated high-quality Te thin films without any post-deposition heat treatment at an unprecedentedly low temperature of only 50 degrees Celsius.
The developed manufacturing process allowed for wafer-scale growth on entire 4-inch wafers, providing precise atomic layer-level thickness control and uniform deposition. Furthermore, the Te thin films demonstrated compatibility with vertical three-dimensional structures -- a crucial requirement for high device integration. This breakthrough holds significant potential for various electronic devices such as transistors, rectifiers, and selection elements.
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Study demonstrates atomic layer deposition route to scalable, electronic-grade van der Waals tellurium thin filmsA research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a significant breakthrough in thin film deposition technology. By employing an innovative atomic layer deposition (ALD) process, Professor Seo successfully achieved regular arrangement of tellurium (Te) atoms at low temperatures as low as 50 degrees Celsius.
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